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| PartNumber | RGT8NL65DGTL | RGT8NS65DGC9 | RGT8NS65DGTL |
| Description | IGBT Transistors FIELD STOP TRENCH IGBT | IGBT Transistors IGBT HIGH VOLT AND CURRENT AP | IGBT Transistors 650V 4A IGBT Stop Trench |
| Manufacturer | ROHM Semiconductor | ROHM Semiconductor | ROHM Semiconductor |
| Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Package / Case | TO-263L-3 | TO-262-3 | TO-263-3 |
| Mounting Style | SMD/SMT | Through Hole | SMD/SMT |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 650 V | 650 V | 650 V |
| Collector Emitter Saturation Voltage | 1.65 V | 1.65 V | 1.65 V |
| Maximum Gate Emitter Voltage | 30 V | 30 V | 30 V |
| Continuous Collector Current at 25 C | 8 A | 8 A | 8 A |
| Pd Power Dissipation | 65 W | 65 W | 65 W |
| Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Packaging | Reel | Tube | Reel |
| Brand | ROHM Semiconductor | ROHM Semiconductor | ROHM Semiconductor |
| Gate Emitter Leakage Current | 200 nA | 200 nA | +/- 200 nA |
| Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 1000 | 50 | 1000 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Part # Aliases | RGT8NL65D | RGT8NS65D(TO-262) | RGT8NS65D(LPDS) |
| Series | - | - | RGT8NS65D |
| Continuous Collector Current Ic Max | - | - | 8 A |
| Operating Temperature Range | - | - | - 40 C to + 175 C |
| Continuous Collector Current | - | - | 4 A |
| Unit Weight | - | - | 0.068654 oz |