RGT30NS65DGC9 vs RGT30NS65DGTL vs RGT30NS65D

 
PartNumberRGT30NS65DGC9RGT30NS65DGTLRGT30NS65D
DescriptionIGBT Transistors IGBT HIGH VOLT AND CURRENT APIGBT Transistors 650V 15A IGBT Stop TrenchROHRGT30NS65D (Alt: RGT30NS65D)
ManufacturerROHM SemiconductorROHM Semiconductor-
Product CategoryIGBT TransistorsIGBT Transistors-
RoHSYY-
TechnologySiSi-
Package / CaseTO-262-3TO-263-3-
Mounting StyleThrough HoleSMD/SMT-
ConfigurationSingle--
Collector Emitter Voltage VCEO Max650 V650 V-
Collector Emitter Saturation Voltage1.65 V1.65 V-
Maximum Gate Emitter Voltage30 V30 V-
Continuous Collector Current at 25 C30 A30 A-
Pd Power Dissipation133 W133 W-
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 175 C+ 175 C-
PackagingTubeReel-
BrandROHM SemiconductorROHM Semiconductor-
Gate Emitter Leakage Current200 nA+/- 200 nA-
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity501000-
SubcategoryIGBTsIGBTs-
Part # AliasesRGT30NS65D(TO-262)RGT30NS65D(LPDS)-
Series-RGT30NS65D-
Continuous Collector Current Ic Max-30 A-
Operating Temperature Range-- 40 C to + 175 C-
Continuous Collector Current-15 A-
Unit Weight-0.068654 oz-
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