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| PartNumber | R6012FNX | R6012FNJTL | R6012FNJ |
| Description | MOSFET Trans MOSFET N-CH 600V 12A | MOSFET 10V Drive Nch MOSFET | |
| Manufacturer | ROHM Semiconductor | ROHM Semiconductor | ROHM Semiconductor |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | SMD/SMT | - |
| Package / Case | TO-220FP-3 | TO-263-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V | - |
| Id Continuous Drain Current | 12 A | 12 A | - |
| Rds On Drain Source Resistance | 510 mOhms | 390 mOhms | - |
| Configuration | Single | Single | - |
| Packaging | Bulk | Reel | Reel |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | ROHM Semiconductor | ROHM Semiconductor | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 500 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Part # Aliases | R6012FNX | R6012FNJ | - |
| Unit Weight | 0.211644 oz | - | - |
| Vgs th Gate Source Threshold Voltage | - | 3 V | - |
| Vgs Gate Source Voltage | - | 30 V | - |
| Qg Gate Charge | - | 35 nC | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 50 W | - |
| Channel Mode | - | Enhancement | - |
| Forward Transconductance Min | - | 3.5 S | - |
| Fall Time | - | 20 ns | - |
| Rise Time | - | 37 ns | - |
| Typical Turn Off Delay Time | - | 77 ns | - |
| Typical Turn On Delay Time | - | 30 ns | - |
| Series | - | - | R6012FNJ |