PartNumber | QSZ4TR | QSZ4 | QSZ4--TR-Z11 |
Description | Bipolar Transistors - BJT ISO TRANSISTORDIODE GEN PURP | ||
Manufacturer | ROHM Semiconductor | ROHM | - |
Product Category | Bipolar Transistors - BJT | Transistors (BJT) - Arrays | - |
RoHS | Y | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | SOT-25-5 | - | - |
Transistor Polarity | NPN, PNP | - | - |
Configuration | Dual | - | - |
Collector Emitter Voltage VCEO Max | 30 V | - | - |
Collector Base Voltage VCBO | 30 V | - | - |
Maximum DC Collector Current | 2 A | - | - |
Gain Bandwidth Product fT | 280 MHz | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Series | QSZ4 | - | - |
DC Current Gain hFE Max | 680 | - | - |
Packaging | Reel | - | - |
Brand | ROHM Semiconductor | - | - |
DC Collector/Base Gain hfe Min | 270 | - | - |
Pd Power Dissipation | 500 mW | - | - |
Product Type | BJTs - Bipolar Transistors | - | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | Transistors | - | - |
Part # Aliases | QSZ4 | - | - |