PZT2907AT3 vs PZT2907A vs PZT2907A T/R

 
PartNumberPZT2907AT3PZT2907APZT2907A T/R
DescriptionBipolar Transistors - BJT 600mA 60V PNPBipolar Transistors - BJT PNP General Purpose
ManufacturerON SemiconductorFairchild Semiconductor-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single-
RoHSN--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-223-4--
Transistor PolarityPNPPNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max- 60 V--
Collector Base Voltage VCBO- 60 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage- 1.6 V--
Maximum DC Collector Current0.6 A0.8 A-
Gain Bandwidth Product fT200 MHz200 MHz-
Minimum Operating Temperature- 65 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Height1.57 mm--
Length6.5 mm--
PackagingReelDigi-ReelR Alternate Packaging-
Width3.5 mm--
BrandON Semiconductor--
Continuous Collector Current- 0.6 A0.8 A-
DC Collector/Base Gain hfe Min75--
Pd Power Dissipation1.5 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity4000--
SubcategoryTransistors--
Unit Weight0.003951 oz0.006632 oz-
Series---
Part Aliases-PZT2907A_NL-
Package Case-TO-261-4, TO-261AA-
Mounting Type-Surface Mount-
Supplier Device Package-SOT-223-4-
Power Max-1W-
Transistor Type-PNP-
Current Collector Ic Max-800mA-
Voltage Collector Emitter Breakdown Max-60V-
DC Current Gain hFE Min Ic Vce-100 @ 150mA, 10V-
Vce Saturation Max Ib Ic-1.6V @ 50mA, 500mA-
Current Collector Cutoff Max-20nA (ICBO)-
Frequency Transition-200MHz-
Pd Power Dissipation-1000 mW-
Collector Emitter Voltage VCEO Max-60 V-
Collector Base Voltage VCBO-60 V-
Emitter Base Voltage VEBO-5 V-
DC Collector Base Gain hfe Min-100-
DC Current Gain hFE Max-300-
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