PSMN7R8-120ESQ vs PSMN7R8-120ES vs PSMN7R8-120PS

 
PartNumberPSMN7R8-120ESQPSMN7R8-120ESPSMN7R8-120PS
DescriptionMOSFET N-channel 120 V 7.9 mo FET
ManufacturerNexperia--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-262-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage120 V--
Id Continuous Drain Current70 A--
Rds On Drain Source Resistance6.72 mOhms--
Vgs th Gate Source Threshold Voltage3 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge167 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation349 W--
ConfigurationSingle--
PackagingTube--
Transistor Type1 N-Channel--
BrandNexperia--
Fall Time60.8 ns--
Product TypeMOSFET--
Rise Time55.3 ns--
Factory Pack Quantity50--
SubcategoryMOSFETs--
Typical Turn Off Delay Time151.8 ns--
Typical Turn On Delay Time45.5 ns--
Unit Weight0.084199 oz--
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