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| PartNumber | PSMN4R6-60BS,118 | PSMN4R6-60PS,127 | PSMN4R6-60PS |
| Description | MOSFET Std N-chanMOSFET | MOSFET N-CH 60V STD LEVEL MOSFET | |
| Manufacturer | Nexperia | Nexperia | NXP |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | Through Hole | - |
| Package / Case | TO-263-3 | TO-220-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
| Id Continuous Drain Current | 100 A | 100 A | - |
| Rds On Drain Source Resistance | 4.4 mOhms | 8.4 mOhms | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 211 W | 211 W | - |
| Configuration | Single | Single | - |
| Packaging | Reel | Tube | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Nexperia | Nexperia | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 800 | 50 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Unit Weight | 0.139332 oz | 0.211644 oz | - |
| Vgs th Gate Source Threshold Voltage | - | 4.8 V | - |
| Qg Gate Charge | - | 70.8 nC | - |
| Channel Mode | - | Enhancement | - |
| Height | - | 9.4 mm | - |
| Length | - | 10.3 mm | - |
| Type | - | N-Channel 60 V 4.6 mOhms Standard Level MOSFET in TO220 | - |
| Width | - | 4.7 mm | - |
| Fall Time | - | 22 ns | - |
| Rise Time | - | 24 ns | - |
| Typical Turn Off Delay Time | - | 58 ns | - |
| Typical Turn On Delay Time | - | 26 ns | - |