PSMN1R0-40ULDX vs PSMN1R0-40SSHJ vs PSMN1R0-40YLD

 
PartNumberPSMN1R0-40ULDXPSMN1R0-40SSHJPSMN1R0-40YLD
DescriptionMOSFET N-channel 40 V, 1.1 mO, 280 A logic level MOSFET in SOT1023A enhanced package for UL2595, using NextPower-S3 Schottky-Plus technologyMOSFET PSMN1R0-40SSH/SOT1235/LFPAK88
ManufacturerNexperiaNexperiaNXP Semiconductors
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseLFPAK56E-4LFPAK88-4-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage40 V40 V-
Id Continuous Drain Current280 A325 A-
Rds On Drain Source Resistance1.1 mOhms1 mOhms-
Vgs th Gate Source Threshold Voltage1.05 V2.4 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge127 nC137 nC-
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 175 C+ 150 C
Pd Power Dissipation164 W375 W-
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingReelReelReel
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandNexperiaNexperia-
Fall Time38 ns26 ns38 ns
Product TypeMOSFETMOSFET-
Rise Time62 ns19 ns62 ns
Factory Pack Quantity15002000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time65 ns59 ns65 ns
Typical Turn On Delay Time52 ns23 ns52 ns
RoHS-Y-
Part # Aliases-934660688118-
Package Case--LFPAK-4
Pd Power Dissipation--198 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--100 A
Vds Drain Source Breakdown Voltage--40 V
Vgs th Gate Source Threshold Voltage--1.7 V
Rds On Drain Source Resistance--1.1 mOhms
Qg Gate Charge--59 nC
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