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| PartNumber | PMZ290UNE2YL | PMZ290UNE2 | PMZ290UNE2YLNEXPERIA |
| Description | MOSFET 20V N-Channel Trench MOSFET | ||
| Manufacturer | Nexperia | NEXPERI | - |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | DFN-1006-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 1.2 A | - | - |
| Rds On Drain Source Resistance | 320 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 450 mV | - | - |
| Vgs Gate Source Voltage | 4.5 V | - | - |
| Qg Gate Charge | 0.8 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 715 mW | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Nexperia | - | - |
| Fall Time | 4 ns | 4 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 10 ns | 10 ns | - |
| Factory Pack Quantity | 10000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 11 ns | 11 ns | - |
| Typical Turn On Delay Time | 6 ns | 6 ns | - |
| Unit Weight | 0.000028 oz | - | - |
| Package Case | - | DFN1006-3 | - |
| Pd Power Dissipation | - | 715 mW | - |
| Vgs Gate Source Voltage | - | 8 V | - |
| Id Continuous Drain Current | - | 1.2 A | - |
| Vds Drain Source Breakdown Voltage | - | 20 V | - |
| Vgs th Gate Source Threshold Voltage | - | 0.95 V | - |
| Rds On Drain Source Resistance | - | 210 mOhms | - |
| Qg Gate Charge | - | 1.4 nV | - |