PMV50XPR vs PMV50XP vs PMV50XP215

 
PartNumberPMV50XPRPMV50XPPMV50XP215
DescriptionMOSFET 20V P-channel Trench MOSFET- Bulk (Alt: PMV50XP215)
ManufacturerNexperiaNXP Semiconductors-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-23-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current4.4 A--
Rds On Drain Source Resistance48 mOhms--
Vgs th Gate Source Threshold Voltage900 mV--
Vgs Gate Source Voltage12 V--
Qg Gate Charge7.7 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation1.096 W--
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Transistor Type1 P-Channel1 P-Channel-
BrandNexperia--
Forward Transconductance Min9 S--
Fall Time68 ns68 ns-
Product TypeMOSFET--
Rise Time18 ns18 ns-
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time135 ns135 ns-
Typical Turn On Delay Time7 ns7 ns-
Unit Weight0.000282 oz--
Pd Power Dissipation-1.096 W-
Vgs Gate Source Voltage-12 V-
Id Continuous Drain Current-- 4.4 A-
Vds Drain Source Breakdown Voltage-- 20 V-
Vgs th Gate Source Threshold Voltage-- 900 mV-
Rds On Drain Source Resistance-48 mOhms-
Qg Gate Charge-7.7 nC-
Forward Transconductance Min-9 S-
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