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| PartNumber | PMV20XNE | PMV20XNE,215 | PMV20XNEA |
| Description | MOSFET N-CH 20V 6.3A TRENCH AUTO TO236AB, RL | ||
| Manufacturer | NXP Semiconductors | - | - |
| Product Category | FETs - Single | - | - |
| Series | - | - | - |
| Packaging | Digi-ReelR Alternate Packaging | - | - |
| Unit Weight | 0.050717 oz | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package Case | TO-236-3, SC-59, SOT-23-3 | - | - |
| Technology | Si | - | - |
| Operating Temperature | -55°C ~ 150°C (TJ) | - | - |
| Mounting Type | Surface Mount | - | - |
| Number of Channels | 1 Channel | - | - |
| Supplier Device Package | TO-236AB (SOT23) | - | - |
| Configuration | Single | - | - |
| FET Type | MOSFET N-Channel, Metal Oxide | - | - |
| Power Max | 510mW | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Drain to Source Voltage Vdss | 30V | - | - |
| Input Capacitance Ciss Vds | 1150pF @ 15V | - | - |
| FET Feature | Standard | - | - |
| Current Continuous Drain Id 25°C | 5.7A (Ta) | - | - |
| Rds On Max Id Vgs | 23 mOhm @ 5.7A, 4.5V | - | - |
| Vgs th Max Id | 900mV @ 250μA | - | - |
| Gate Charge Qg Vgs | 18.6nC @ 4.5V | - | - |
| Pd Power Dissipation | 1.2 W | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Fall Time | 32 ns | - | - |
| Rise Time | 17 ns | - | - |
| Vgs Gate Source Voltage | 12 V | - | - |
| Id Continuous Drain Current | 7.2 A | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Vgs th Gate Source Threshold Voltage | 400 mV | - | - |
| Rds On Drain Source Resistance | 23 mOhms | - | - |
| Transistor Polarity | N-Channel | - | - |
| Typical Turn Off Delay Time | 33 ns | - | - |
| Typical Turn On Delay Time | 8 ns | - | - |
| Qg Gate Charge | 12.4 nC | - | - |
| Forward Transconductance Min | 11 S | - | - |
| Channel Mode | Enhancement | - | - |