PMST5550,115 vs PMST5550,135 vs PMST5550

 
PartNumberPMST5550,115PMST5550,135PMST5550
DescriptionBipolar Transistors - BJT TRANS HV TAPE-7Bipolar Transistors - BJT TRANS HV TAPE-11
ManufacturerNexperiaNexperiaPHILIPS
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTTransistors (BJT) - Single
RoHSYY-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-323-3SOT-323-3-
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max140 V140 V-
Collector Base Voltage VCBO160 V160 V-
Emitter Base Voltage VEBO6 V6 V-
Maximum DC Collector Current0.3 A0.3 A-
Gain Bandwidth Product fT300 MHz300 MHz-
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 150 C+ 150 C-
DC Current Gain hFE Max60 at 1 mA, 5 V60 at 1 mA, 5 V-
Height1 mm1 mm-
Length2.2 mm2.2 mm-
PackagingReelReel-
Width1.35 mm1.35 mm-
BrandNexperiaNexperia-
DC Collector/Base Gain hfe Min60 at 1 mA, 5 V, 60 at 10 mA, 5 V, 20 at 50 mA, 5 V60 at 1 mA, 5 V, 60 at 10 mA, 5 V, 20 at 50 mA, 5 V-
Pd Power Dissipation200 mW200 mW-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
QualificationAEC-Q101AEC-Q101-
Factory Pack Quantity300010000-
SubcategoryTransistorsTransistors-
Part # AliasesPMST5550 T/R/T3 PMST5550-
Unit Weight0.000176 oz0.000176 oz-
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