PD57070-E vs PD57070 vs PD57070S

 
PartNumberPD57070-EPD57070PD57070S
DescriptionRF MOSFET Transistors RF Pwr Transistors LDMOST Plastic N ChFET RF 65V 945MHZ PWRSO-10
ManufacturerSTMicroelectronicsSTMicroelectronics-
Product CategoryRF MOSFET TransistorsIC Chips-
RoHSY--
Transistor PolarityN-ChannelN-Channel-
TechnologySiSi-
Id Continuous Drain Current7 A--
Vds Drain Source Breakdown Voltage65 V--
Gain14.7 dB14.7 dB at 945 MHz-
Output Power70 W70 W-
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePowerSO-10RF-Formed-4--
PackagingTubeTube-
ConfigurationSingle--
Height3.5 mm--
Length7.5 mm--
Operating Frequency1 GHz1 GHz-
SeriesPD57070-EPD57070-E-
TypeRF Power MOSFETRF Power MOSFET-
Width9.4 mm--
BrandSTMicroelectronics--
Channel ModeEnhancement--
Moisture SensitiveYes--
Pd Power Dissipation95 W--
Product TypeRF MOSFET Transistors--
Factory Pack Quantity400--
SubcategoryMOSFETs--
Vgs Gate Source Voltage20 V--
Unit Weight0.105822 oz--
Package Case-PowerSO-10RF (Formed Lead)-
Pd Power Dissipation-95 W-
Vgs Gate Source Voltage-+/- 20 V-
Id Continuous Drain Current-7 A-
Vds Drain Source Breakdown Voltage-65 V-
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