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| PartNumber | PBSS5160PAPSX | PBSS5160PAP,115 | PBSS5160PAPS115 |
| Description | Bipolar Transistors - BJT 60V 1A PNP/PNP low VCEsat (BISS) trans | Bipolar Transistors - BJT 60V 1A PNP/PNP lo VCEsat transistor | - Bulk (Alt: PBSS5160PAPS115) |
| Manufacturer | Nexperia | Nexperia | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | Y | Y | - |
| Package / Case | DFN-2020-6 | DFN-2020-6 | - |
| Packaging | Reel | Reel | - |
| Brand | Nexperia | Nexperia | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | Transistors | Transistors | - |
| Mounting Style | - | SMD/SMT | - |
| Transistor Polarity | - | PNP | - |
| Configuration | - | Dual | - |
| Collector Emitter Voltage VCEO Max | - | - 60 V | - |
| Collector Base Voltage VCBO | - | - 60 V | - |
| Emitter Base Voltage VEBO | - | - 7 V | - |
| Collector Emitter Saturation Voltage | - | - 125 mV | - |
| Maximum DC Collector Current | - | - 1.5 A | - |
| Gain Bandwidth Product fT | - | 125 MHz | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| DC Current Gain hFE Max | - | 245 | - |
| Continuous Collector Current | - | - 1 A | - |
| DC Collector/Base Gain hfe Min | - | 170 | - |
| Pd Power Dissipation | - | 1450 mW | - |