PBSS4160PANP,115 vs PBSS4160PANPSX vs PBSS4160PANPS115

 
PartNumberPBSS4160PANP,115PBSS4160PANPSXPBSS4160PANPS115
DescriptionBipolar Transistors - BJT 60V 1A NPN/PNP lo VCEsat transistorBipolar Transistors - BJT 60V 1A NPN/PNP- Bulk (Alt: PBSS4160PANPS115)
ManufacturerNexperiaNexperia-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYY-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseDFN-2020-6DFN-2020-6-
Transistor PolarityNPN, PNPNPN, PNP-
ConfigurationDualDual-
Collector Emitter Voltage VCEO Max60 V60 V-
Collector Base Voltage VCBO60 V60 V-
Emitter Base Voltage VEBO7 V7 V-
Collector Emitter Saturation Voltage90 mV, - 125 mV90 mV, - 125 mV-
Maximum DC Collector Current1.5 A1 A, - 1 A-
Gain Bandwidth Product fT175 MHz, 125 MHz175 MHz, 125 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
DC Current Gain hFE Max430, 245--
PackagingReelReel-
BrandNexperiaNexperia-
Continuous Collector Current1 A--
DC Collector/Base Gain hfe Min290, 245290, 170-
Pd Power Dissipation1450 mW2 W-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
QualificationAEC-Q101AEC-Q101-
Factory Pack Quantity30003000-
SubcategoryTransistorsTransistors-
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