PBSS4140DPN,115 vs PBSS4140DPN vs PBSS4140DPN , G5240B1T1U

 
PartNumberPBSS4140DPN,115PBSS4140DPNPBSS4140DPN , G5240B1T1U
DescriptionBipolar Transistors - BJT NPN/PNP 40V 1A
ManufacturerNexperia--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseTSOP-6--
Transistor PolarityNPN, PNP--
ConfigurationDual--
Collector Emitter Voltage VCEO Max40 V--
Collector Base Voltage VCBO40 V--
Emitter Base Voltage VEBO5 V--
Maximum DC Collector Current1 A--
Gain Bandwidth Product fT150 MHz--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
DC Current Gain hFE Max300 at 500 mA, 5 V--
Height1 mm--
Length3.1 mm--
PackagingReel--
Width1.7 mm--
BrandNexperia--
DC Collector/Base Gain hfe Min300 at 500 mA, 5 V at NPN, 200 at 1 A, 5 V at NPN, 300 at 100 mA, 5 V at PNP, 250 at 500 mA, 5 V at PNP--
Pd Power Dissipation370 mW--
Product TypeBJTs - Bipolar Transistors--
QualificationAEC-Q101--
Factory Pack Quantity3000--
SubcategoryTransistors--
Part # AliasesPBSS4140DPN T/R--
Unit Weight0.000705 oz--
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