PartNumber | NXP3875YR | NXP3875YVL | NXP3875Y |
Description | Bipolar Transistors - BJT 51V 150 mA NPN gnrl purpose transistors | Bipolar Transistors - BJT NXP3875Y/TO-236AB/REEL 11" Q3/ | Bipolar (BJT) Single Transistor, GENERAL PURPOSE, NPN, 50 V, 80 MHz, 200 mW, 150 mA, 120 RoHS Compliant: Yes |
Manufacturer | Nexperia | Nexperia | NXP Semiconductors |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Transistors - Bipolar (BJT) - RF |
RoHS | Y | Y | - |
Mounting Style | SMD/SMT | - | SMD/SMT |
Package / Case | TO-236AB-3 | SOT-23-3 | - |
Transistor Polarity | NPN | - | NPN |
Configuration | Single | - | Single |
Collector Emitter Voltage VCEO Max | 50 V | - | - |
Collector Base Voltage VCBO | 60 V | - | - |
Emitter Base Voltage VEBO | 5 V | - | - |
Collector Emitter Saturation Voltage | 250 mV | - | 250 mV |
Maximum DC Collector Current | 150 mA | - | 150 mA |
Gain Bandwidth Product fT | 80 MHz | - | 80 MHz |
Minimum Operating Temperature | - 65 C | - | - 65 C |
Maximum Operating Temperature | + 150 C | - | + 150 C |
DC Current Gain hFE Max | 240 | - | 240 |
Packaging | Reel | Reel | Reel |
Brand | Nexperia | Nexperia | - |
Continuous Collector Current | 200 mA | - | 200 mA |
DC Collector/Base Gain hfe Min | 200 | - | - |
Pd Power Dissipation | 200 mW | - | - |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
Qualification | AEC-Q101 | AEC-Q101 | - |
Factory Pack Quantity | 3000 | 10000 | - |
Subcategory | Transistors | Transistors | - |
Package Case | - | - | TO-236AB-3 |
Pd Power Dissipation | - | - | 200 mW |
Collector Emitter Voltage VCEO Max | - | - | 50 V |
Collector Base Voltage VCBO | - | - | 60 V |
Emitter Base Voltage VEBO | - | - | 5 V |
DC Collector Base Gain hfe Min | - | - | 200 |