NVS4001NT1G vs NVS4114-0109FMR3 vs NVS4001NT

 
PartNumberNVS4001NT1GNVS4114-0109FMR3NVS4001NT
DescriptionMOSFET NFET SC70 20V 238MA 1.5OHVALVE S/SOL B/WIRE ON SUBPLATE
ManufacturerON Semiconductor-ON
Product CategoryMOSFET-IC Chips
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseSOT-323-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current270 mA--
Rds On Drain Source Resistance1.5 Ohms--
Vgs th Gate Source Threshold Voltage800 mV--
Vgs Gate Source Voltage4 V--
Qg Gate Charge0.9 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation330 mW--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101--
PackagingReel-Reel
SeriesNTS4001N-NTS4001N
Transistor Type1 N-Channel--
BrandON Semiconductor--
Forward Transconductance Min80 mS--
Fall Time82 ns--
Product TypeMOSFET--
Rise Time23 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time94 ns--
Typical Turn On Delay Time17 ns--
Unit Weight0.000176 oz-0.004395 oz
Package Case--SOT-323-3
Id Continuous Drain Current--270 mA
Vds Drain Source Breakdown Voltage--30 V
Rds On Drain Source Resistance--1.5 Ohms
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