 |  |  | |
| PartNumber | NVMTS0D4N04CTXG | NVMTS0D4N04CLTXG | NVMTS0D6N04CLTXG |
| Description | MOSFET AFSM T6 40V SG NCH | MOSFET AFSM T6 40V LL NCH | MOSFET T6 40V LL PQFN8*8 EXPANSI |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | DFNW-8 | Power-88-8 | PQFN-88-8 |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 40 V | 40 V | 40 V |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Packaging | Reel | Reel | Reel |
| Brand | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Number of Channels | - | 1 Channel | 1 Channel |
| Id Continuous Drain Current | - | 553.8 A | 554.5 A |
| Rds On Drain Source Resistance | - | 400 uOhms | 420 uOhms |
| Vgs th Gate Source Threshold Voltage | - | 1 V | 1.2 V |
| Vgs Gate Source Voltage | - | 20 V | 10 V |
| Qg Gate Charge | - | 341 nC | 126 nC |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Maximum Operating Temperature | - | + 175 C | + 175 C |
| Pd Power Dissipation | - | 244 W | 245.4 W |
| Configuration | - | Single | Single Triple Source Quad Drain |
| Channel Mode | - | Enhancement | Enhancement |
| Transistor Type | - | 1 N-Channel | 1 N-Channel Power MOSFET |
| Forward Transconductance Min | - | 330 S | 323 S |
| Fall Time | - | 107 ns | 84.7 ns |
| Rise Time | - | 147 ns | 111 ns |
| Typical Turn Off Delay Time | - | 217 ns | 180 ns |
| Typical Turn On Delay Time | - | 110 ns | 89.4 ns |
| Technology | - | - | Si |