NTS4101PT1G vs NTS4101PT1 vs NTS4101PT1G , FM5822-A

 
PartNumberNTS4101PT1GNTS4101PT1NTS4101PT1G , FM5822-A
DescriptionMOSFET -20V -1.37A P-ChannelMOSFET -20V -1.37A
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSYN-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-323-3SOT-323-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage20 V20 V-
Id Continuous Drain Current1.37 A1.37 A-
Rds On Drain Source Resistance160 mOhms104 mOhms-
Vgs th Gate Source Threshold Voltage450 mV--
Vgs Gate Source Voltage2.5 V8 V-
Qg Gate Charge6.4 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation329 mW329 mW-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Height0.85 mm0.85 mm-
Length2.1 mm2.1 mm-
ProductMOSFET Small SignalMOSFET Small Signal-
SeriesNTS4101P--
Transistor Type1 P-Channel1 P-Channel-
TypeMOSFETMOSFET-
Width1.24 mm1.24 mm-
BrandON SemiconductorON Semiconductor-
Forward Transconductance Min5.2 S--
Fall Time18 ns14.9 ns-
Product TypeMOSFETMOSFET-
Rise Time14.9 ns14.9 ns-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time26 ns26 ns-
Typical Turn On Delay Time6.2 ns6.2 ns-
Unit Weight0.000176 oz0.000176 oz-
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