NTHC5513T1G vs NTHC5513T1 vs NTHC5513T1/C1X

 
PartNumberNTHC5513T1GNTHC5513T1NTHC5513T1/C1X
DescriptionMOSFET 20V +3.9A/-3A ComplementaryMOSFET 20V +3.9A/-3A
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSYN-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseChipFET-8ChipFET-8-
Number of Channels2 Channel2 Channel-
Transistor PolarityN-Channel, P-ChannelN-Channel, P-Channel-
Vds Drain Source Breakdown Voltage20 V20 V-
Id Continuous Drain Current3.9 A3.9 A-
Rds On Drain Source Resistance80 mOhms, 155 mOhms80 mOhms, 155 mOhms-
Vgs Gate Source Voltage12 V12 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation1.1 W1.1 W-
ConfigurationDualDual-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Height1.05 mm1.05 mm-
Length3.05 mm3.05 mm-
ProductMOSFET Small SignalMOSFET Small Signal-
SeriesNTHC5513--
Transistor Type1 N-Channel, 1 P-Channel1 N-Channel, 1 P-Channel-
TypeMOSFETMOSFET-
Width1.65 mm1.65 mm-
BrandON SemiconductorON Semiconductor-
Forward Transconductance Min6 S6 S-
Fall Time3 ns, 27 ns3 ns, 27 ns-
Product TypeMOSFETMOSFET-
Rise Time9 ns, 13 ns9 ns, 13 ns-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time10 ns, 33 ns10 ns, 33 ns-
Typical Turn On Delay Time5 ns, 7 ns5 ns, 7 ns-
Unit Weight0.002998 oz0.002998 oz-
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