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| PartNumber | NTD6414AN | NTD6414AN-1G | NTD6414ANLT4G |
| Description | MOSFET N-CH 100V 32A IPAK | ||
| Manufacturer | ON | - | - |
| Product Category | FETs - Single | - | - |
| Series | NTD6414AN | - | - |
| Packaging | Reel | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package Case | TO-252-3 | - | - |
| Technology | Si | - | - |
| Number of Channels | 1 Channel | - | - |
| Configuration | Single | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Pd Power Dissipation | 100 W | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Fall Time | 48 ns | - | - |
| Rise Time | 52 ns | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Id Continuous Drain Current | 32 A | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Rds On Drain Source Resistance | 30 mOhms | - | - |
| Transistor Polarity | N-Channel | - | - |
| Typical Turn Off Delay Time | 38 ns | - | - |
| Typical Turn On Delay Time | 11 ns | - | - |
| Qg Gate Charge | 40 nC | - | - |
| Forward Transconductance Min | 18 S | - | - |