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| PartNumber | NTD5862NT4G | NTD5862N-1G | NTD5862N |
| Description | MOSFET NFET DPAK 60V 102A 6MOHM | MOSFET NFET IPAK 60V 102A 6MOHM | |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | Y | N | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
| Id Continuous Drain Current | 98 A | 98 A | - |
| Rds On Drain Source Resistance | 5.7 mOhms | 4.4 mOhms | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 82 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 115 W | 115 W | - |
| Configuration | Single | Single | Single |
| Packaging | Reel | - | Tube |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | ON Semiconductor | ON Semiconductor | - |
| Fall Time | 60 ns | 60 ns | 60 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 70 ns | 70 ns | 70 ns |
| Factory Pack Quantity | 2500 | 75 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 35 ns | 35 ns | 35 ns |
| Typical Turn On Delay Time | 18 ns | 18 ns | 18 ns |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
| Vgs th Gate Source Threshold Voltage | - | 2 V | - |
| Package Case | - | - | TO-252-3 |
| Pd Power Dissipation | - | - | 115 W |
| Id Continuous Drain Current | - | - | 98 A |
| Vds Drain Source Breakdown Voltage | - | - | 60 V |
| Vgs th Gate Source Threshold Voltage | - | - | 2 V |
| Rds On Drain Source Resistance | - | - | 4.4 mOhms |