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| PartNumber | NTD5802NT4G | NTD5803NT4G | NTD5802N |
| Description | MOSFET 101A, 40V, 4.2mOhms N-Channel | MOSFET NFET DPAK 40V 75A 7.4mOhm | |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 40 V | 40 V | - |
| Id Continuous Drain Current | 101 A | 76 A | - |
| Rds On Drain Source Resistance | 4.4 mOhms | 7.2 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V | - | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 75 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 93.75 W | 83 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | - |
| Height | 2.38 mm | 2.38 mm | - |
| Length | 6.73 mm | 6.73 mm | - |
| Series | NTD5802N | NTD5803N | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Type | Power MOSFET | - | - |
| Width | 6.22 mm | 6.22 mm | - |
| Brand | ON Semiconductor | ON Semiconductor | - |
| Forward Transconductance Min | 16.8 S | - | - |
| Fall Time | 8.5 ns | 6.6 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 52 ns | 21.4 ns | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 39 ns | 28.3 ns | - |
| Typical Turn On Delay Time | 14 ns | 12.6 ns | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |