NSV60200SMTWTBG vs NSV60200DMTWTBG vs NSV60200LT1G

 
PartNumberNSV60200SMTWTBGNSV60200DMTWTBGNSV60200LT1G
DescriptionBipolar Transistors - BJT 60V SINGLE 2A LOWVC E(SAT)Bipolar Transistors - BJT DUAL 60V 2A LOWVCES AT PNPBipolar Transistors - BJT 60V PNP LOW VCE(SAT) XTR
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTBipolar Transistors - BJT
RoHSYYY
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseWDFN-6WDFN-6SOT-23-3
Transistor PolarityPNPPNPPNP
ConfigurationSingleDualSingle
Collector Emitter Voltage VCEO Max- 60 V- 60 V- 60 V
Collector Base Voltage VCBO- 60 V- 60 V- 80 V
Emitter Base Voltage VEBO- 6 V- 6 V- 7 V
Collector Emitter Saturation Voltage- 0.365 V- 0.365 V170 mV
Gain Bandwidth Product fT155 MHz155 MHz100 MHz
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
PackagingReelReelReel
BrandON SemiconductorON SemiconductorON Semiconductor
Continuous Collector Current2 A2 A- 2 A
DC Collector/Base Gain hfe Min150150-
Pd Power Dissipation1.8 W1.8 W460 mW
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar TransistorsBJTs - Bipolar Transistors
QualificationAEC-Q101AEC-Q101AEC-Q101
Factory Pack Quantity300030003000
SubcategoryTransistorsTransistorsTransistors
Maximum DC Collector Current--- 4 A
Series--NSS60200LT1G
Unit Weight--0.000282 oz
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