PartNumber | NSV60200SMTWTBG | NSV60200DMTWTBG | NSV60200LT1G |
Description | Bipolar Transistors - BJT 60V SINGLE 2A LOWVC E(SAT) | Bipolar Transistors - BJT DUAL 60V 2A LOWVCES AT PNP | Bipolar Transistors - BJT 60V PNP LOW VCE(SAT) XTR |
Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | Y | Y |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | WDFN-6 | WDFN-6 | SOT-23-3 |
Transistor Polarity | PNP | PNP | PNP |
Configuration | Single | Dual | Single |
Collector Emitter Voltage VCEO Max | - 60 V | - 60 V | - 60 V |
Collector Base Voltage VCBO | - 60 V | - 60 V | - 80 V |
Emitter Base Voltage VEBO | - 6 V | - 6 V | - 7 V |
Collector Emitter Saturation Voltage | - 0.365 V | - 0.365 V | 170 mV |
Gain Bandwidth Product fT | 155 MHz | 155 MHz | 100 MHz |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Packaging | Reel | Reel | Reel |
Brand | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Continuous Collector Current | 2 A | 2 A | - 2 A |
DC Collector/Base Gain hfe Min | 150 | 150 | - |
Pd Power Dissipation | 1.8 W | 1.8 W | 460 mW |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | Transistors | Transistors | Transistors |
Maximum DC Collector Current | - | - | - 4 A |
Series | - | - | NSS60200LT1G |
Unit Weight | - | - | 0.000282 oz |