NSTB1002DXV5T1G vs NSTB1002DXV5T1 vs NSTB1003DXV5T1

 
PartNumberNSTB1002DXV5T1GNSTB1002DXV5T1NSTB1003DXV5T1
DescriptionBipolar Transistors - Pre-Biased 100mA Complementary 50V Dual NPN & PNPTRANS NPN PREBIAS/PNP 0.5W SOT55
ManufacturerON Semiconductor-ON Semiconductor
Product CategoryBipolar Transistors - Pre-Biased-Transistors (BJT) - Arrays, Pre-Biased
RoHSY--
ConfigurationDual Common Base and Collector--
Transistor PolarityNPN, PNP--
Typical Input Resistor47 kOhms--
Typical Resistor Ratio1--
Mounting StyleSMD/SMT--
Package / CaseSOT-553-5--
DC Collector/Base Gain hfe Min80--
Collector Emitter Voltage VCEO Max50 V--
Continuous Collector Current- 0.2 A--
Peak DC Collector Current100 mA--
Pd Power Dissipation357 mW--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesNSTB1002DXV5--
PackagingReel-Tape & Reel (TR)
DC Current Gain hFE Max80--
Height0.6 mm--
Length1.7 mm--
Width1.3 mm--
BrandON Semiconductor--
Number of Channels2 Channel--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity4000--
SubcategoryTransistors--
Unit Weight0.000099 oz--
Package Case--SOT-553
Mounting Type--Surface Mount
Supplier Device Package--SOT-553
Power Max---
Transistor Type--1 NPN, 1 PNP - Pre-Biased (Dual)
Current Collector Ic Max---
Voltage Collector Emitter Breakdown Max---
Resistor Base R1 Ohms---
Resistor Emitter Base R2 Ohms---
DC Current Gain hFE Min Ic Vce---
Vce Saturation Max Ib Ic---
Current Collector Cutoff Max---
Frequency Transition---
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