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| PartNumber | NSBC114TDXV6T1G | NSBC114TDP6T5G | NSBC114TDXV6T1 |
| Description | Bipolar Transistors - Pre-Biased 100mA 50V Dual NPN | Bipolar Transistors - Pre-Biased DUAL NBRT | Bipolar Transistors - Pre-Biased 100mA 50V Dual NPN |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased |
| RoHS | Y | Y | N |
| Configuration | Dual | - | Dual |
| Transistor Polarity | NPN | - | NPN |
| Typical Input Resistor | 10 kOhms | - | 10 kOhms |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | SOT-563-6 | - | SOT-563-6 |
| DC Collector/Base Gain hfe Min | 160 | - | 160 |
| Collector Emitter Voltage VCEO Max | 50 V | - | 50 V |
| Continuous Collector Current | 0.1 A | - | 0.1 A |
| Peak DC Collector Current | 100 mA | - | 100 mA |
| Pd Power Dissipation | 357 mW | - | 357 mW |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Series | NSBC114TDXV6 | NSBC114TDP6 | - |
| Packaging | Reel | Reel | Reel |
| DC Current Gain hFE Max | 160 | - | 160 |
| Height | 0.55 mm | - | 0.55 mm |
| Length | 1.6 mm | - | 1.6 mm |
| Width | 1.2 mm | - | 1.2 mm |
| Brand | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased |
| Factory Pack Quantity | 4000 | 8000 | - |
| Subcategory | Transistors | Transistors | Transistors |
| Unit Weight | 0.000106 oz | - | 0.000106 oz |