NJVMJD44H11G vs NJVMJD44E3T4G vs NJVMJD44H11D3T4G

 
PartNumberNJVMJD44H11GNJVMJD44E3T4GNJVMJD44H11D3T4G
DescriptionBipolar Transistors - BJT BIP DPAK NPN 8A 80VDarlington Transistors BIP DPAK NPN 10A 80V TRBipolar Transistors - BJT SILICON POWER TRANSI
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryBipolar Transistors - BJTDarlington TransistorsBipolar Transistors - BJT
RoHSYYY
Mounting StyleSMD/SMT--
Package / CaseDPAK-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max80 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage1 V--
Gain Bandwidth Product fT85 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesMJD44H11MJD44E3MJD44H11
DC Current Gain hFE Max60--
PackagingTubeReelReel
BrandON SemiconductorON SemiconductorON Semiconductor
Continuous Collector Current8 A--
Pd Power Dissipation20 W--
Product TypeBJTs - Bipolar TransistorsDarlington TransistorsBJTs - Bipolar Transistors
QualificationAEC-Q101AEC-Q101AEC-Q101
Factory Pack Quantity7525002500
SubcategoryTransistorsTransistorsTransistors
Unit Weight0.070548 oz--
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