NGTB15N120FL2WG vs NGTB15N120FLWG vs NGTB15N120

 
PartNumberNGTB15N120FL2WGNGTB15N120FLWGNGTB15N120
DescriptionIGBT Transistors 1200V/15A VERY FAST IGBTIGBT Transistors 1200V/15A IGBT SOLAR/UPS
ManufacturerON SemiconductorON SemiconductorON
Product CategoryIGBT TransistorsIGBT TransistorsIGBTs - Single
RoHSYY-
TechnologySiSi-
PackagingTubeTubeTube
BrandON SemiconductorON Semiconductor-
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity3030-
SubcategoryIGBTsIGBTs-
Unit Weight0.035274 oz0.229281 oz-
Package / Case-TO-247-
Mounting Style-Through Hole-
Configuration-Single-
Collector Emitter Voltage VCEO Max-1200 V-
Collector Emitter Saturation Voltage-2 V-
Maximum Gate Emitter Voltage-20 V-
Continuous Collector Current at 25 C-30 A-
Pd Power Dissipation-156 W-
Minimum Operating Temperature-- 55 C-
Maximum Operating Temperature-+ 150 C-
Series-NGTB15N120FL-
Gate Emitter Leakage Current-100 nA-
Package Case--TO-247-3
Input Type--Standard
Mounting Type--Through Hole
Supplier Device Package--TO-247-3
Power Max--294W
Reverse Recovery Time trr--110ns
Current Collector Ic Max--30A
Voltage Collector Emitter Breakdown Max--1200V
IGBT Type--Trench Field Stop
Current Collector Pulsed Icm--60A
Vce on Max Vge Ic--2.4V @ 15V, 15A
Switching Energy--1.2mJ (on), 370μJ (off)
Gate Charge--109nC
Td on off 25°C--64ns/132ns
Test Condition--600V, 15A, 10 Ohm, 15V
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