PartNumber | NESG2101M05-A | NESG2101M05 | NESG2101M05 , EM6324QYSP |
Description | RF Bipolar Transistors NPN SiGe High Freq | RF Bipolar Transistors NPN SiGe High Freq | |
Manufacturer | CEL | NEC | - |
Product Category | RF Bipolar Transistors | IC Chips | - |
RoHS | Y | - | - |
Transistor Type | Bipolar | - | - |
Technology | SiGe | - | - |
Emitter Base Voltage VEBO | 1.5 V | - | - |
Continuous Collector Current | 35 mA | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | SOT-343 | - | - |
Type | RF Silicon Germanium | - | - |
Brand | CEL | - | - |
Pd Power Dissipation | 175 mW | - | - |
Product Type | RF Bipolar Transistors | - | - |
Factory Pack Quantity | 1 | - | - |
Subcategory | Transistors | - | - |