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| PartNumber | NE68033-T1B-A | NE68033-T1B-R44-A | NE68033-T1B |
| Description | RF Bipolar Transistors NPN High Frequency | RF Bipolar Transistors NPN Silicon AMP Oscilltr Transist | RF Bipolar Transistors NPN High Frequency |
| Manufacturer | CEL | CEL | - |
| Product Category | RF Bipolar Transistors | Transistors - Bipolar (BJT) - RF | - |
| RoHS | Y | - | - |
| Transistor Type | Bipolar | NPN | - |
| Technology | Si | Si | - |
| Transistor Polarity | NPN | - | - |
| Collector Emitter Voltage VCEO Max | 10 V | - | - |
| Emitter Base Voltage VEBO | 1.5 V | - | - |
| Continuous Collector Current | 0.035 A | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Configuration | Single | Single | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-23-3 | - | - |
| Packaging | Reel | Tape & Reel (TR) | - |
| DC Current Gain hFE Max | 250 | - | - |
| Height | 1.1 mm | - | - |
| Length | 2.9 mm | - | - |
| Operating Frequency | 2 GHz | - | - |
| Type | RF Bipolar Small Signal | - | - |
| Width | 1.5 mm | - | - |
| Brand | CEL | - | - |
| Gain Bandwidth Product fT | 10 GHz | - | - |
| Pd Power Dissipation | 200 mW (1/5 W) | - | - |
| Product Type | RF Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Part # Aliases | 2SC3585-T1B-A | - | - |
| Unit Weight | 0.000282 oz | 0.050717 oz | - |
| Series | - | - | - |
| Package Case | - | TO-236-3, SC-59, SOT-23-3 | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | SOT-23 | - |
| Power Max | - | 200mW | - |
| Current Collector Ic Max | - | 35mA | - |
| Voltage Collector Emitter Breakdown Max | - | 10V | - |
| DC Current Gain hFE Min Ic Vce | - | 80 @ 10mA, 6V | - |
| Frequency Transition | - | 10GHz | - |
| Noise Figure dB Typ f | - | 1.8dB @ 2GHz | - |
| Gain | - | 9dB | - |