NE677M04-A vs NE677M04 vs NE677M04-T1-A

 
PartNumberNE677M04-ANE677M04NE677M04-T1-A
DescriptionRF Bipolar Transistors NPN High FrequencyRF Bipolar Transistors
ManufacturerCEL--
Product CategoryTransistors - Bipolar (BJT) - RF--
Series---
PackagingBulk Alternate Packaging--
Mounting StyleSMD/SMT--
Package CaseSOT-343F--
TechnologySi--
Mounting TypeSurface Mount--
Supplier Device PackageSOT-343F--
ConfigurationSingle Dual Emitter--
Power Max205mW--
Transistor TypeNPN--
Current Collector Ic Max50mA--
Voltage Collector Emitter Breakdown Max6V--
DC Current Gain hFE Min Ic Vce75 @ 20mA, 3V--
Frequency Transition15GHz--
Noise Figure dB Typ f1.7dB @ 2GHz--
Gain16dB--
Pd Power Dissipation205 mW--
Maximum Operating Temperature+ 150 C--
Minimum Operating Temperature- 65 C--
Operating Frequency1.8 GHz--
Collector Emitter Voltage VCEO Max6 V--
Transistor PolarityNPN--
Emitter Base Voltage VEBO2 V--
Continuous Collector Current50 mA--
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