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| PartNumber | MUN5212DW1T1G | MUN5212DW1T1 | MUN5212 |
| Description | Bipolar Transistors - Pre-Biased 100mA 50V BRT Dual NPN | Bipolar Transistors - Pre-Biased 100mA 50V BRT Dual | |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased | - |
| RoHS | Y | N | - |
| Configuration | Dual | Dual | - |
| Transistor Polarity | NPN | NPN | - |
| Typical Input Resistor | 22 kOhms | 22 kOhms | - |
| Typical Resistor Ratio | 1 | 1 | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-363-6 | SOT-363-6 | - |
| DC Collector/Base Gain hfe Min | 60 | 60 | - |
| Collector Emitter Voltage VCEO Max | 50 V | 50 V | - |
| Continuous Collector Current | 0.1 A | 0.1 A | - |
| Peak DC Collector Current | 100 mA | 100 mA | - |
| Pd Power Dissipation | 187 mW | 187 mW | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | MUN5212DW1 | - | - |
| Packaging | Reel | Tube | - |
| DC Current Gain hFE Max | 60 at 5 mA at 10 V | 60 at 5 mA at 10 V | - |
| Height | 0.9 mm | 0.9 mm | - |
| Length | 2 mm | 2 mm | - |
| Width | 1.25 mm | 1.25 mm | - |
| Brand | ON Semiconductor | ON Semiconductor | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | Transistors | Transistors | - |
| Unit Weight | 0.000423 oz | 0.000265 oz | - |