MTD3055V vs MTD3055VL vs MTD3055/V1

 
PartNumberMTD3055VMTD3055VLMTD3055/V1
DescriptionMOSFET N-Channel FET Enhancement ModeMOSFET N-Ch LL FET Enhancement Mode
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSEE-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3TO-252-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage60 V60 V-
Id Continuous Drain Current12 A12 A-
Rds On Drain Source Resistance150 mOhms180 mOhms-
Vgs Gate Source Voltage20 V20 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation3.9 W3.9 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Height2.39 mm2.39 mm-
Length6.73 mm6.73 mm-
SeriesMTD3055VMTD3055VL-
Transistor Type1 N-Channel1 N-Channel-
TypeMOSFETMOSFET-
Width6.22 mm6.22 mm-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Fall Time50 ns90 ns-
Product TypeMOSFETMOSFET-
Rise Time60 ns190 ns-
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time30 ns30 ns-
Typical Turn On Delay Time10 ns20 ns-
Part # AliasesMTD3055V_NLMTD3055VL_NL-
Unit Weight0.009184 oz0.009184 oz-
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