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| PartNumber | MTB30P06VT4 | MTB30P06V | MTB30P06VG |
| Description | MOSFET 60V 30A P-Channel | Power Field-Effect Transistor, 30A I(D), 60V, 0.08ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | |
| Manufacturer | ON Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | N | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 30 A | - | - |
| Rds On Drain Source Resistance | 80 mOhms | - | - |
| Vgs Gate Source Voltage | 15 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 3 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 4.83 mm | - | - |
| Length | 10.29 mm | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Type | MOSFET | - | - |
| Width | 9.65 mm | - | - |
| Brand | ON Semiconductor | - | - |
| Forward Transconductance Min | 7.9 S | - | - |
| Fall Time | 52.4 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 25.9 ns | - | - |
| Factory Pack Quantity | 800 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 98 ns | - | - |
| Typical Turn On Delay Time | 14.7 ns | - | - |
| Unit Weight | 0.139332 oz | - | - |