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| PartNumber | MRFE6S9205HR5 | MRFE6S9205HR3 | MRFE6S9205H |
| Description | RF MOSFET Transistors HV6E 900MHZ 200W NI880S | RF MOSFET Transistors HV6E 900MHZ 200W NI880S | |
| Manufacturer | NXP | NXP | - |
| Product Category | RF MOSFET Transistors | RF MOSFET Transistors | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Technology | Si | Si | - |
| Vds Drain Source Breakdown Voltage | 66 V | 66 V | - |
| Minimum Operating Temperature | - 65 C | - 65 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | NI-880 | NI-880 | - |
| Packaging | Reel | Reel | - |
| Configuration | Single | Single | - |
| Height | 5.08 mm | 5.08 mm | - |
| Length | 34.16 mm | 34.16 mm | - |
| Width | 13.8 mm | 13.8 mm | - |
| Brand | NXP / Freescale | NXP / Freescale | - |
| Channel Mode | Enhancement | Enhancement | - |
| Product Type | RF MOSFET Transistors | RF MOSFET Transistors | - |
| Factory Pack Quantity | 50 | 250 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Vgs Gate Source Voltage | - 0.5 V, 12 V | - 0.5 V, 12 V | - |
| Unit Weight | 0.343480 oz | 0.343480 oz | - |
| RoHS | - | Y | - |