MRF8VP13350GNR3 vs MRF8VP13350NR3 vs MRF8VP13350NR5


PartNumber	MRF8VP13350GNR3	MRF8VP13350NR3	MRF8VP13350NR5
Description	RF MOSFET Transistors RF POWER LDMOS TRANSISTOR 700-1300 MHz, 350 W CW, 50 V	RF MOSFET Transistors RF POWER LDMOS TRANSISTOR 700-1300 MHz, 350 W CW, 50 V	RF MOSFET Transistors RF POWER LDMOS TRANSISTOR 700-1300 MHz, 350 W CW, 50 V
Manufacturer	NXP	NXP	NXP
Product Category	RF MOSFET Transistors	RF MOSFET Transistors	RF MOSFET Transistors
RoHS	Y	Y	Y
Transistor Polarity	Dual N-Channel	Dual N-Channel	Dual N-Channel
Technology	Si	Si	Si
Id Continuous Drain Current	1.3 A	1.3 A	1.3 A
Vds Drain Source Breakdown Voltage	- 500 mV, 100 V	- 500 mV, 100 V	- 500 mV, 100 V
Gain	19.2 dB	19.2 dB	19.2 dB
Output Power	350 W	350 W	350 W
Minimum Operating Temperature	- 40 C	- 40 C	- 40 C
Maximum Operating Temperature	+ 150 C	+ 150 C	+ 150 C
Mounting Style	SMD/SMT	SMD/SMT	SMD/SMT
Package / Case	OM-780G-4	OM-780-4	OM-780-4L
Packaging	Reel	Reel	Reel
Operating Frequency	700 MHz to 1300 MHz	700 MHz to 1300 MHz	700 MHz to 1300 MHz
Series	MRF8VP13350	MRF8VP13350	MRF8VP13350
Type	RF Power MOSFET	RF Power MOSFET	RF Power MOSFET
Brand	NXP / Freescale	NXP / Freescale	NXP / Freescale
Number of Channels	2 Channel	2 Channel	2 Channel
Product Type	RF MOSFET Transistors	RF MOSFET Transistors	RF MOSFET Transistors
Factory Pack Quantity	250	250	50
Subcategory	MOSFETs	MOSFETs	MOSFETs
Vgs Gate Source Voltage	- 6 V, 10 V	- 6 V, 10 V	- 6 V, 10 V
Vgs th Gate Source Threshold Voltage	1.3 V	1.3 V	1.3 V
Part # Aliases	935320727528	935316089528	935316089578
Unit Weight	0.108111 oz	0.108111 oz	0.108416 oz
Moisture Sensitive	-	Yes	-