PartNumber | MRF6V2010GNR1 | MRF6V2010GNR5 | MRF6V2010NB |
Description | RF MOSFET Transistors VHV6 10W TO270-2GN | RF MOSFET Transistors VHV6 10W TO270-2GN | |
Manufacturer | NXP | NXP | - |
Product Category | RF MOSFET Transistors | RF MOSFET Transistors | - |
RoHS | E | E | - |
Transistor Polarity | N-Channel | N-Channel | - |
Technology | Si | Si | - |
Vds Drain Source Breakdown Voltage | 110 V | 110 V | - |
Gain | 23.9 dB | 23.9 dB | - |
Output Power | 10 W | 10 W | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TO-270-2 | TO-270-2 | - |
Packaging | Reel | Reel | - |
Configuration | Single | Single | - |
Operating Frequency | 450 MHz | 450 MHz | - |
Type | RF Power MOSFET | RF Power MOSFET | - |
Brand | NXP / Freescale | NXP / Freescale | - |
Moisture Sensitive | Yes | Yes | - |
Product Type | RF MOSFET Transistors | RF MOSFET Transistors | - |
Factory Pack Quantity | 500 | 50 | - |
Subcategory | MOSFETs | MOSFETs | - |
Vgs Gate Source Voltage | 10 V | 10 V | - |
Vgs th Gate Source Threshold Voltage | 3 V | 3 V | - |
Part # Aliases | 935321298528 | - | - |
Unit Weight | 0.019330 oz | 0.019330 oz | - |