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| PartNumber | MRF6P18190HR5 | MRF6P18190HR6 | MRF6P21190H |
| Description | RF MOSFET Transistors HV6 1.8GHZ 44W | RF MOSFET Transistors HV6 1.8GHZ 44W | |
| Manufacturer | NXP | NXP | - |
| Product Category | RF MOSFET Transistors | RF MOSFET Transistors | - |
| RoHS | Y | Y | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Technology | Si | Si | - |
| Vds Drain Source Breakdown Voltage | 68 V | 68 V | - |
| Gain | 15.9 dB | 15.9 dB | - |
| Output Power | 44 W | 44 W | - |
| Minimum Operating Temperature | - 65 C | - 65 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | NI-1230-5 | NI-1230-5 | - |
| Packaging | Reel | Reel | - |
| Configuration | Dual | Dual | - |
| Height | 5.08 mm | 5.08 mm | - |
| Length | 41.28 mm | 41.28 mm | - |
| Operating Frequency | 1.8 GHz to 1.88 GHz | 1.8 GHz to 1.88 GHz | - |
| Type | RF Power MOSFET | RF Power MOSFET | - |
| Width | 10.29 mm | 10.29 mm | - |
| Brand | NXP / Freescale | NXP / Freescale | - |
| Channel Mode | Enhancement | Enhancement | - |
| Pd Power Dissipation | 648 W | 648 W | - |
| Product Type | RF MOSFET Transistors | RF MOSFET Transistors | - |
| Factory Pack Quantity | 50 | 150 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Vgs Gate Source Voltage | - 0.5 V, 12 V | - 0.5 V, 12 V | - |
| Vgs th Gate Source Threshold Voltage | 3 V | 3 V | - |
| Unit Weight | 0.464036 oz | 0.465355 oz | - |