MMST4126-7-F vs MMST4126-7 vs MMST4126-7-F , CJ78M09

 
PartNumberMMST4126-7-FMMST4126-7MMST4126-7-F , CJ78M09
DescriptionBipolar Transistors - BJT -25V 200mWBipolar Transistors - BJT -25V 200mW
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYN-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-323-3SOT-323-3-
Transistor PolarityPNPPNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max- 25 V- 25 V-
Collector Base Voltage VCBO- 25 V- 25 V-
Emitter Base Voltage VEBO- 4 V- 4 V-
Collector Emitter Saturation Voltage- 0.4 V- 0.4 V-
Maximum DC Collector Current0.2 A0.2 A-
Gain Bandwidth Product fT250 MHz250 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesMMST41MMST4126-
DC Current Gain hFE Max360360-
Height1 mm1 mm-
Length2.2 mm2.2 mm-
PackagingReelReel-
Width1.35 mm1.35 mm-
BrandDiodes IncorporatedDiodes Incorporated-
Continuous Collector Current- 0.2 A- 0.2 A-
DC Collector/Base Gain hfe Min120120-
Pd Power Dissipation200 mW200 mW-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity30003000-
SubcategoryTransistorsTransistors-
Unit Weight0.000176 oz0.000176 oz-
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