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| PartNumber | MMIX1T132N50P3 | MMIX1T550N055T2 | MMIX1T600N04T2 |
| Description | Discrete Semiconductor Modules Disc MSFT SMPD Pkg-HiPerFETMSFT SMPD-B | MOSFET SMPD MOSFETs Power Device | MOSFET 40V 600A |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | Discrete Semiconductor Modules | MOSFET | MOSFET |
| RoHS | Y | Y | - |
| Product | Power MOSFET Modules | - | - |
| Type | Polar3 | TrenchT2 GigaMOS Power MOSFET | - |
| Vgs Gate Source Voltage | 30 V | 20 V | - |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 175 C | - |
| Brand | IXYS | IXYS | IXYS |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Fall Time | 15 ns | 230 ns | - |
| Id Continuous Drain Current | 63 A | 550 A | 600 A |
| Pd Power Dissipation | 520 W | 830 W | - |
| Product Type | Discrete Semiconductor Modules | MOSFET | MOSFET |
| Rds On Drain Source Resistance | 43 mOhms | 1.3 mOhms | 1.3 mOhms |
| Rise Time | 19 ns | 40 ns | - |
| Factory Pack Quantity | 20 | 20 | 20 |
| Subcategory | Discrete Semiconductor Modules | MOSFETs | MOSFETs |
| Tradename | Polar3 | HiPerFET | HiPerFET |
| Typical Turn Off Delay Time | 90 ns | 90 ns | - |
| Typical Turn On Delay Time | 42 ns | 45 ns | - |
| Vds Drain Source Breakdown Voltage | 500 V | 55 V | 40 V |
| Vgs th Gate Source Threshold Voltage | 3 V | 3.8 V | - |
| Technology | - | Si | Si |
| Package / Case | - | SMPD-24 | SMPD-24 |
| Qg Gate Charge | - | 595 nC | - |
| Channel Mode | - | Enhancement | - |
| Packaging | - | Tube | Tube |
| Height | - | 5.7 mm | - |
| Length | - | 25.25 mm | - |
| Series | - | MMIX1T550N055 | MMIX1T600N04 |
| Width | - | 23.25 mm | - |
| Forward Transconductance Min | - | 90 S | - |