MMDF1N05ER2 vs MMDF1N05ER2G vs MMDF1N05ER2/F1N05

 
PartNumberMMDF1N05ER2MMDF1N05ER2GMMDF1N05ER2/F1N05
DescriptionMOSFET 50V 1A N-ChannelMOSFET NFET SO8D 50V 200mA 300mOhm
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSNY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOIC-8SOIC-8-
Number of Channels2 Channel2 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage50 V50 V-
Id Continuous Drain Current1 A2 A-
Rds On Drain Source Resistance300 mOhms300 mOhms-
Vgs Gate Source Voltage20 V20 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation2 W2 W-
ConfigurationDualDual-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Height1.5 mm1.5 mm-
Length5 mm5 mm-
Transistor Type2 N-Channel2 N-Channel-
TypeMOSFETMOSFET-
Width4 mm4 mm-
BrandON SemiconductorON Semiconductor-
Forward Transconductance Min1.5 S1.5 S-
Fall Time25 ns25 ns-
Product TypeMOSFETMOSFET-
Rise Time30 ns30 ns-
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time40 ns40 ns-
Typical Turn On Delay Time20 ns20 ns-
Unit Weight0.006596 oz0.006596 oz-
Vgs th Gate Source Threshold Voltage-3 V-
Qg Gate Charge-12.5 nC-
Series-MMDF1N05E-
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