MJE200STU vs MJE200 vs MJE200-T

 
PartNumberMJE200STUMJE200MJE200-T
DescriptionBipolar Transistors - BJT NPN Epitaxial SilBipolar Transistors - BJT 5A 25V 15W NPN
ManufacturerON SemiconductorONFSC
Product CategoryBipolar Transistors - BJTTransistors (BJT) - SingleTransistors (BJT) - Single
RoHSY--
Mounting StyleThrough Hole--
Package / CaseTO-126-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max25 V--
Collector Base Voltage VCBO40 V--
Emitter Base Voltage VEBO8 V--
Collector Emitter Saturation Voltage1.8 V--
Maximum DC Collector Current5 A--
Gain Bandwidth Product fT65 MHz--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
SeriesMJE200--
DC Current Gain hFE Max180--
Height11 mm--
Length8 mm--
PackagingTube--
Width3.25 mm--
BrandON Semiconductor / Fairchild--
Continuous Collector Current5 A--
DC Collector/Base Gain hfe Min45--
Pd Power Dissipation15 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity1920--
SubcategoryTransistors--
Part # AliasesMJE200STU_NL--
Unit Weight0.026843 oz--
Top