MJE171 vs MJE171STU vs MJE171/MJE181

 
PartNumberMJE171MJE171STUMJE171/MJE181
DescriptionBipolar Transistors - BJT 3A 60V 12.5W PNPBipolar Transistors - BJT PNP Epitaxial Sil
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSNY-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-225-3TO-126-3-
Transistor PolarityPNPPNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max60 V- 60 V-
Collector Base Voltage VCBO80 V- 80 V-
Emitter Base Voltage VEBO7 V- 7 V-
Collector Emitter Saturation Voltage1.7 V--
Maximum DC Collector Current3 A3 A-
Gain Bandwidth Product fT50 MHz50 MHz-
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Height11.04 mm (Max)11 mm-
Length7.74 mm (Max)8 mm-
PackagingBulkTube-
Width2.66 mm (Max)3.25 mm-
BrandON SemiconductorON Semiconductor / Fairchild-
Continuous Collector Current3 A- 3 A-
DC Collector/Base Gain hfe Min5050-
Pd Power Dissipation1.5 W12.5 W-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity50060-
SubcategoryTransistorsTransistors-
Unit Weight0.068784 oz0.026843 oz-
DC Current Gain hFE Max-250-
Part # Aliases-MJE171STU_NL-
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