MJE15034G vs MJE15034 vs MJE15034G(ROHS)

 
PartNumberMJE15034GMJE15034MJE15034G(ROHS)
DescriptionBipolar Transistors - BJT 4A 350V 50W NPNBipolar Transistors - BJT 4A 350V 50W NPN
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYN-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220-3TO-220-3-
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max350 V350 V-
Collector Base Voltage VCBO350 V350 V-
Emitter Base Voltage VEBO5 V5 V-
Collector Emitter Saturation Voltage0.5 V0.5 V-
Maximum DC Collector Current4 A4 A-
Gain Bandwidth Product fT30 MHz30 MHz-
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesMJE15034--
Height15.75 mm9.28 mm (Max)-
Length10.53 mm10.28 mm (Max)-
PackagingTubeTube-
Width4.83 mm4.82 mm (Max)-
BrandON SemiconductorON Semiconductor-
Continuous Collector Current4 A4 A-
Pd Power Dissipation50 W50 W-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity5050-
SubcategoryTransistorsTransistors-
Unit Weight0.211644 oz0.211644 oz-
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