MJD45H11T4G vs MJD45H11T4 vs MJD45H11T4G-CUT TAPE

 
PartNumberMJD45H11T4GMJD45H11T4MJD45H11T4G-CUT TAPE
DescriptionBipolar Transistors - BJT 8A 80V 20W PNPBipolar Transistors - BJT PNP Gen Pur Switch
ManufacturerON SemiconductorSTMicroelectronics-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYY-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3TO-252-3-
Transistor PolarityPNPPNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max80 V80 V-
Collector Base Voltage VCBO5 V80 V-
Emitter Base Voltage VEBO5 V5 V-
Collector Emitter Saturation Voltage1 V1 V-
Maximum DC Collector Current8 A16 A-
Gain Bandwidth Product fT90 MHz--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesMJD45H11MJD45H11-
Height2.38 mm2.4 mm-
Length6.73 mm6.6 mm-
PackagingReelReel-
Width6.22 mm6.2 mm-
BrandON SemiconductorSTMicroelectronics-
Continuous Collector Current8 A8 A-
DC Collector/Base Gain hfe Min6060-
Pd Power Dissipation20 W20 W-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity25002500-
SubcategoryTransistorsTransistors-
Unit Weight0.012381 oz0.063493 oz-
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