MJD41CT4G vs MJD41CT4 vs MJD41CT4G ON J41CG

 
PartNumberMJD41CT4GMJD41CT4MJD41CT4G ON J41CG
DescriptionBipolar Transistors - BJT 6A 100V 20W NPNBipolar Transistors - BJT 6A 100V 20W NPN
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYN-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseDPAK-3DPAK-3-
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max100 V100 V-
Collector Base Voltage VCBO100 V100 V-
Emitter Base Voltage VEBO5 V5 V-
Collector Emitter Saturation Voltage1.5 V1.5 V-
Maximum DC Collector Current6 A6 A-
Gain Bandwidth Product fT3 MHz3 MHz-
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesMJD41C--
Height2.38 mm2.38 mm-
Length6.73 mm6.73 mm-
PackagingReelReel-
Width6.22 mm6.22 mm-
BrandON SemiconductorON Semiconductor-
Continuous Collector Current6 A6 A-
DC Collector/Base Gain hfe Min3030-
Pd Power Dissipation20 W20 W-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity25002500-
SubcategoryTransistorsTransistors-
Unit Weight0.009185 oz0.009185 oz-
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