MIXA80W1200PTEH vs MIXA80W1200TEH vs MIXA80W1200TED

 
PartNumberMIXA80W1200PTEHMIXA80W1200TEHMIXA80W1200TED
DescriptionDiscrete Semiconductor Modules IGBT Module - Sixpack E3-Pack-PFPIGBT Modules Six-Pack SPT IGBTIGBT Modules Six-Pack XPT IGBT
ManufacturerIXYSIXYSIXYS
Product CategoryDiscrete Semiconductor ModulesIGBT ModulesIGBT Modules
RoHSY--
BrandIXYSIXYSIXYS
Product TypeDiscrete Semiconductor ModulesIGBT ModulesIGBT Modules
Factory Pack Quantity2456
SubcategoryDiscrete Semiconductor ModulesIGBTsIGBTs
Configuration-Six-PackSix-Pack
Collector Emitter Voltage VCEO Max-1.2 kV1.2 kV
Collector Emitter Saturation Voltage-1.8 V1.8 V
Continuous Collector Current at 25 C-120 A120 A
Gate Emitter Leakage Current-500 nA500 nA
Pd Power Dissipation-390 W390 W
Package / Case-E3-PackE2-Pack
Minimum Operating Temperature-- 40 C- 40 C
Maximum Operating Temperature-+ 125 C+ 125 C
Packaging-BulkBulk
Series-MIXA80W1200MIXA80W1200
Mounting Style-Chassis MountChassis Mount
Maximum Gate Emitter Voltage-20 V20 V
Tradename-XPTXPT
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