KSE3055TTU vs KSE3055T vs KSE3055T(MJE3055T)

 
PartNumberKSE3055TTUKSE3055TKSE3055T(MJE3055T)
DescriptionBipolar Transistors - BJT NPN Sil TransistorTRANS NPN 60V 10A TO-220
ManufacturerON SemiconductorFAIRCHILD-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single-
RoHSY--
Mounting StyleThrough Hole--
Package / CaseTO-220-3TO-220-3-
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max60 V--
Collector Base Voltage VCBO70 V--
Emitter Base Voltage VEBO5 V--
Maximum DC Collector Current10 A--
Gain Bandwidth Product fT2 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
DC Current Gain hFE Max100--
Height9.4 mm--
Length10.1 mm--
PackagingTubeBulk-
Width4.7 mm--
BrandON Semiconductor / Fairchild--
Continuous Collector Current10 A--
DC Collector/Base Gain hfe Min20--
Pd Power Dissipation75 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity50--
SubcategoryTransistors--
Unit Weight0.080072 oz--
Series---
Part Status-Obsolete-
Transistor Type-NPN-
Current Collector (Ic) (Max)-10A-
Voltage Collector Emitter Breakdown (Max)-60V-
Vce Saturation (Max) @ Ib, Ic-8V @ 3.3A, 10A-
Current Collector Cutoff (Max)-700A-
DC Current Gain (hFE) (Min) @ Ic, Vce-20 @ 4A, 4V-
Power Max-600mW-
Frequency Transition-2MHz-
Operating Temperature-150°C (TJ)-
Mounting Type-Through Hole-
Supplier Device Package-TO-220-3-
Base Part Number-*-
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