KSD880YTU vs KSD880Y vs KSD880Y834Y

 
PartNumberKSD880YTUKSD880YKSD880Y834Y
DescriptionBipolar Transistors - BJT NPN Epitaxial SilBipolar Transistors - BJT NPN Epitaxial Sil
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYY-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220-3TO-220-3-
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max60 V60 V-
Collector Base Voltage VCBO60 V60 V-
Emitter Base Voltage VEBO7 V7 V-
Collector Emitter Saturation Voltage0.4 V0.4 V-
Maximum DC Collector Current3 A3 A-
Gain Bandwidth Product fT3 MHz3 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesKSD880KSD880-
DC Current Gain hFE Max300300-
Height9.4 mm9.4 mm (Max)-
Length10.1 mm10.1 mm (Max)-
PackagingTubeBulk-
Width4.7 mm4.7 mm (Max)-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Continuous Collector Current3 A3 A-
DC Collector/Base Gain hfe Min6060-
Pd Power Dissipation30 W30 W-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity1000200-
SubcategoryTransistorsTransistors-
Unit Weight0.063493 oz0.063493 oz-
Part # Aliases-KSD880Y_NL-
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